condition v r = 30v i f =100ma v r = 0v, f=1mhz i f = i r =100ma i rr = 10ma , r l =100 w unit a v pf ns symbol i r v f c t t rr * note 1. schottky barrier diode is sensitive to electric shock (static electricity, etc.). due attention must be paid on charg e of a human body and leakage from the equipment used. 2. rated input/output frequency : 250mhz 3. * t rr measuring circuit n electrical characteristics (ta= 25?c) unit v v ma ma a ?c ?c symbol v r v rrm i fm i f(av) i fsm * t j t stg * 50hz sine wave, one-cycle wave, high value (non-repetitive) ma784 silicon epitaxial planer type for super high-speed switching circuit for small current rectification n features l s-mini type 2-pin package, enabling high-density mounting l i f(av) =100ma rectification possible l fast reverse recovery time t rr , optimum for high-frequency rectifica- tion l low v f (forward voltage) with high rectification efficiency n absolute maximum ratings (ta= 25?c) unit : mm parameter reverse voltage (dc) repetitive peak reverse voltage peak forward current average forward current non-repetitive peak forward surge current junction temperature storage temperature rating 30 30 300 100 1 125 C 55 to +150 schottky barrier diodes (sbd) 2sk1606 a bias insertion unit n-50bu 90% pulse generator pg-10n r s =50 w.f.analyzer sas-8130 r i =50 t p =2 s t r =0.35ns d =0.05 i f =100ma i r =100ma r l =100 10% input pulse output pulse i rr =10ma t r t p t rr v r i f t t parameter reverse current (dc) forward voltage (dc) terminal capacitance reverse recovery time min typ 20 2.0 max 15 0.55 n marking 2d 1 : anode 2 : cathode s-mini type package (2-pin) marking symbol : 2d 1 2 cathode anode 0.625 0.3 1.25 0.1 0.5 0.1 0.7 0.1 2.5 0.2 1.7 0.1 0.4 0.1 0.4 0.1 0.16 +0.1 ?.06
i r C ta c t C v r i r C v r i f C v f v f C ta schottky barrier diodes (sbd) ma784 10 ? 0 0.1 0.2 0.3 0.4 0.5 0.6 10 ? 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f (m a ) ta=125?c 75?c 25?c ?0?c ambient temperature ta ( ?c ) forward voltage v f ( v ) 0 0.2 0.4 0.6 0.8 1.0 ?0 0 40 80 120 160 200 i f =100ma 10ma 3ma 10 ? 0 5 10 15 20 25 30 1 10 10 2 10 3 10 4 reverse voltage v r ( v ) reverse current i r ( a ) ta=125?c 75?c 25?c reverse voltage v r ( v ) terminal capacitance c t ( pf ) f=1mhz ta=25?c 0 24 20 16 12 8 4 0 5 10 15 20 25 30 ambient temperature ta ( ?c ) reverse current i r ( a ) 10 ? ?0 0 40 80 120 160 200 1 10 10 2 10 3 10 4 v r =30v 3v 1v
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